The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH_4OH/H_2O_2 Mixtures

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概要

• 論文の詳細を見る

• In this study some recent findings on the cleaning action of the NH_4OH/H_2O_2 (SC1) step in a pre-gate oxidation cleaning (RCA cleaning) are given. An important parameter in this mixture is the NH_4OH/H_2O_2 ratio. The Fe contamination on the silicon surface after this cleaning step is found to increase upon decreasing the NH_4OH/H_2O_2 ratio. This can be attributed to the incorporation of Fe in the chemical oxide, grown by the hydrogen peroxide. The particle removal efficiency of the cleaning step is found to decrease upon decreasing the NH_4OH/H_2O_2 ratio. On the other hand, using a lower NH_4OH concentration results in a less severe silicon surface roughening. It is demonstrated in this study that the NH_4OH/H_2O_2 ratio during the SCI step of the cleaning is the determining parameter for the breakdown properties of a gate oxide. A (0.25/1/5) NH_4OH / H_2O_2/H_2O mixture at 75℃ in our experimental conditions is suggested to be the best compromise between particle removal and surface roughness during the SC1 step.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• Hellemans L.

  Lab. Chem. Biolog. Dynamica Katholieke Universiteit Leuven Celestijnenlaan 200d

• Philipossian A.

  Digital Equipment Corporation

• Heyns M.m.

  Imec Vzw

• MEURIS M.

  IMEC vzw

• VERHAVERBEKE S.

  IMEC vzw

• MERTENS P.W.

  IMEC vzw

• BRUYNSERAEDE Y.

  Lab. Vaste stoffysika en Magnetisme, Katholieke Universiteit Leuven, Celestijnenlaan 200D

• Bruynseraede Y.

  Lab. Vaste Stoffysika En Magnetisme Katholieke Universiteit Leuven Celestijnenlaan 200d

関連論文

• The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH_4OH/H_2O_2 Mixtures

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