High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates

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概要

• 論文の詳細を見る

• High-quality InAs/Al_<0.2>Ga_<0.8>Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000cm^2/Vs for sheet concentrations of n_s = 1.8×10^<12> cm^<-2> were routinely achieved at room temperature for undoped InAs/Al_<0.2>Ga_<0.8>Sb quantum well structures on Germanium substrates. We developed a simple processing technology for the fabrication of Corbino magnetoresistive devices. Excellent current sensitivities of 195 Ω/T and voltage sensitivities of 2.35 T^<-1> at a magnetic field of 0.15 T were measured for Corbino shaped magnetoresistors on Germanium substrate at room temperature. This sensing performance is comparable to that obtained by identical sensors on GaAs substrate.

• 社団法人応用物理学会の論文
• 1999-03-15

著者

• De Boeck

  Imec Vzw

• Borghs Gustaaf

  Imec Vzw

• BEHET Markus

  IMEC vzw

• MIJLEMANS Paul

  Union Miniere, Electro-Optic Materials

• Mijlemans Paul

  Union Miniere Electro-optic Materials

関連論文

• Molecular Beam Epitaxial Growth of Bulk AlAs_Sb_ and AlAs_Sb_/InAs Superlattices on Lattice-Matched InAs Substrates
• High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates

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