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Hynix Semiconductor Inc. Kyoungki‐do Kor | 論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Stacked Pt/SrBi_2Ta_Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
- Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
- Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory