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Hynix Semiconductor | 論文
- A Full Wave Voltage Multiplier for RFID Transponders
- Process Proximity Correction by Neural Networks
- A Temperature- and Supply-Insensitive Fully On-Chip 1Gb/s CMOS Open-Drain Output Driver for High-Bandwidth DRAMs
- 16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium)
- A Decision Feedback Equalizing Receiver for the SSTL SDRAM Interface with Clock-Data Skew Compensation(Integrated Electronics)
- An Analytic Time Jitter Equation of NRZ Signals in Uniformly Loaded PCB Transmission Lines
- CMOS Sense-Amplifier Type Flip-Flop Having Improved Setup/Hold Margin(Integrated Electronics)
- A Paired MOS Charge Pump for Low Voltage Operation(Electronic Circuits)
- A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications(Electronic Circuits)
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma
- Synthesis and Properties of Unsymmetrical Indamine Dyes Derived from 2,2'-Bis(dialkylamino)-4,5' -bithiazoles
- Chromophoric System of Unsymmetrical Indamine Dyes Derived from (Diethylamino)thiazole Dimer
- Process Proximity Correction by Neural Networks