A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications(Electronic Circuits)

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概要

• 論文の詳細を見る

• A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-μm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134dBc/Hz at 1MHz offset. The receiver RF front-end achieves a NF of 3.5dB, an IIP3 of -16dBm, and a maximum gain of 80dB. The receiver consumes 52mA with a 3-V supply and occupies only 2mm^2 die area with minimal external components.

• 社団法人電子情報通信学会の論文
• 2004-06-01

著者

• Ahn Hyung

  The Dept. Of Eecs Kaist

• LIM Kyoohyun

  FCI, Inc., Seongnam

• PARK Chan-Hong

  Berkana Wireless, Inc.

• KIM Jae

  Hynix Semiconductor

• KIM Beomsup

  the Dept. of EECS, KAIST

• Park C‐h

  Berkana Wireless Inc.

• Lim Kyoohyun

  Fci Inc. Seongnam

• Kim Beomsup

  The Dept. Of Eecs Kaist:berkana Wireless Inc.

• Park Chan-hong

  Berkana Wireless Inc.

関連論文

• A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications(Electronic Circuits)
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