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Hitachi Ulsi Engineering Corp. | 論文
- A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
- A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers(Special Issue on the 1994 VLSI Circuits Symposium)
- Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
- Highly Selective Etching of Poly-Si by Time Modulation Bias
- A Synchronous DRAM with New High-Speed I/O Lines Method for the MultiMedia Age
- 単一電子メモリの現状と将来
- A 128Mb Single-Electron Memory
- A 3.2-mA 6-Bit Pipelined A/D Coverter for a Bluetooth RF Transceiver(Special Issue on High-Performance Analog Integrated Circuits)
- A 10-bit 3-Msample/s CMOS Multipath Multibit Cyclic ADC (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- A 1.2-V Feedforward Amplifier and A/D Converter for Mixed Analog/Digital LSIs (Special Issue on Low-Power LSI Technologies)
- Heuristic Method for Phase-Conflict Minimization in Automatic Phase-Shift Mask Design
- Simple And Secure password authentication protocol, ver.2(SAS-2) (メディア工学)
- Simple And Secure password authentication protocol, ver.2 (SAS-2)
- Simple And Secure password authentication protocol, ver.2 (SAS-2)
- Simple and Secure Coin (SAS-Coin) : A Practical Micropayment System
- Simple and Secure Password Authentication Protocol : (SAS)
- Heat Transfer Experiment of a Closed Two-Phase Thermosyphonwith Partially Perforated Concentric Tube
- Thermal Performance of a Heat Pipe with Carbon Fiber Wick
- The Analysis of the Defective Cells Induces by COP in a 0.3-micron-technology Node DRAM
- Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters