スポンサーリンク
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185-8601, Japan | 論文
- Cu/low-k配線パターンのラインエッジラフネス評価(配線・実装技術と関連材料技術)
- Characteristics of cell division and cell elongation that confer deep-seeding tolerance in wheat cultivar Hong Mang Mai
- Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
- Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern
- Increase in Electrical Resistivity of Copper and Aluminum Fine Lines
- Characterization of Line-Edge Roughness in Cu/Low-$k$ Interconnect Pattern
- Resistivity Increase In Ultrafine-Line Copper Conductor for ULSIs : Semiconductors
- High-Amplitude and Long-Burst Pulse Transmission Array Probe for Phase-Change Molecular Imaging
- Suppression of Leakage Current of Metal--Insulator--Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
- Demonstration of Secondary Electron Detection using Monolithic Multi-Channel Electron Detector
- Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles
- New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers
- Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects
- 3次元システムLSI開発のためのチップレベルTSVプロセス(次世代電子機器を支える三次元積層技術と先端実装の設計・評価技術論文)