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Gwangju Inst. Sci. And Technol. Gwangju Kor | 論文
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- A Statistical Approach to Error Compensation in Spectral Quantization(Speech and Hearing)
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- A Novel Molecular Ladder Structure of Bactenecin by Dimerization : Studies on the Peptide-membrane Interaction
- Bandwidth-Scalable Stereo Audio Coding Based on a Layered Structure
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- A Compact Diode-Pumped Microchip Green Light Source with a Built-in Thermoelectric Element
- Backward Terahertz Generation in Periodically Poled Lithium Niobate Crystal via Difference Frequency Generation
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5