スポンサーリンク
Graduate School of Frontier Science The Univ. Of Tokyo | 論文
- Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
- Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
- Fabrication of 3-5 on insulator structures on Si using microchannel epitaxy with a two-step growth technique
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
- Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth
- Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si
- Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Reaction-diffusion chip implementing excitable lattices with multiple-valued cellular automata