スポンサーリンク
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan | 論文
- Effective Mobility Enhancement in Al
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
- Observation of Intense Bursts of Terahertz Synchrotron Radiation at UVSOR-II
- Highly-Crystallized Ge:H Film Growth from GeH
- Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
- High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System
- Determination of Bulk Minority-Carrier Lifetime in BaSi
- Determination of Bulk Minority-Carrier Lifetime in BaSi₂ Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
- High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Blob/Hole Generation in the Divertor Leg of the Large Helical Device
- A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
- Preparation and Properties of Poly(phenazasiline) with Various Substituents (Special Issue : Printed Electronics)
- Systematic Analysis of Current Decay Time during Disruption in HYBTOK-II Tokamak
- P13. Sonochemical Degradation of Cellulose in N-Methyl-Morpholine N-Oxide/Water Mixture(Poster Presentation)
- Estimation of Pharmaceutical Removal in a Sewage Treatment Plant -Model Simulation Based on Laboratory Test Data-
- Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer
- High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice