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Fundamental Research Laboratories, NEC Corporation | 論文
- 28p-PSA-29 TlSr_2(R_Ca_x)Cu_2O_(R=Lu又はTl)でのアンダードープ、 最適ドープ、 オーバードープ超伝導体
- Observation of Periodic Marangoni Convection in a Molten Silicon Bridge on board the TR-IA-6 Rocket (TR-IA6号機特集(1))
- 13p-B-4 A_xB_C_結晶中でのC_分子の方向
- 29a-C-5 A_xB_C_の構造
- Low Temperature Growth of Epitaxial La_Sr_MnO_3 Thin Films by an Excimer-Laser-Assisted Coating Pyrolysis Process
- 29aYF-5 一次元モット絶縁体、ハロゲン架橋 Ni 錯体及び銅酸化物の二光子吸収スペクトル
- 26a-Q-4 TlSr_2CaCu_2O_y系の合成と物性
- Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 : Structure and Mechanical and Thermal Properties of Condensed Matter
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Calixarene Electron Beam Resist for Nano-Lithography
- Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
- 18aPS-45 Zスキャン法による低次元銅酸化物薄膜の三次非線形感受率の測定