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Functional Devices Laboratories Sharp Corporation | 論文
- Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
- Preparation of Novel PZTN Thin Film Co-doped Si
- Fabrication of KNbO_3 Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition
- High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
- Study of Ag Addition to YBa_2Cu_3O_ Films Prepared using Electrophoretic Deposition
- New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
- New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- New Low Temperature Processing of MOCVD-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- Fine-Grained SrBi_2Ta_2O_9 Thin Films by Low Temperature Annealing
- Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
- Dual Scanning Scheme for Ferroelectric Liquid Crystal Display
- Fabrication of Ag-Doped Y_1Ba_2Cu_3O_ Superconducting Films on Cu Substrates by Electrophoretic Deposition
- Fabrication of Y-Ba-Cu-O Superconducting Films on Cu Substrates by an Electrophoretic Deposition Technique
- Magnetic Field Dependence of Voltage Noise in Y_1Ba_2Cu_3O_ Ceramic Superconductor Film
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Silicon Field Emitter Capable of Low Voltage Emission
- Electric Field Effect on Layer Structure in Surface-Stabilized Ferroelectric Liquid Crystals
- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of MFIS Structure
- Structural Properties of Some Cyanoethenes with Optical Nonlinearity