Silicon Field Emitter Capable of Low Voltage Emission

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概要

• 論文の詳細を見る

• A silicon field emitter of a very low voltage emission type has been obtained. In this emitter, a thermal SiO_2 film was used as an insulator which separates the gate electrode from the cathode substrate. It is easy to decrease the distance between the gate electrode and the emitter by thermal oxidation and oblique deposition process. In this field emitter, in spite of 3 μm diameter of initial mask size, we were able to obtain a 400 nm gap which is the distance between the gate electrode and the emitter tip. Therefore, the onset of emission was established at gate voltages as low as 10 V with Fowler-Nordheim-like emission characteristics. Then anode current was 2.5 μA at 25 V in one emitter and transconductance (g_m=ΔIA/ΔVG) was 0.5 μS.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Maruo Yuji

  Functional Devices Laboratories Sharp Corporation

• Kishi Akira

  Functional Devices Laboratories Sharp Corporation

• Urayama Masao

  Functional Devices Laboratories Sharp Corporation

• ISE Tomokazu

  Functional Devices Laboratories, Sharp Corporation

• IMAMOTO Reiko

  Functional Devices Laboratories, Sharp Corporation

• TAKASE Takeo

  Functional Devices Laboratories, Sharp Corporation

• Ise Tomokazu

  Functional Devices Laboratories Sharp Corporation

• Takase T

  Toshiba Manufacturing & Engineering Research Center Kanagawa

• Imamoto Reiko

  Functional Devices Laboratories Sharp Corporation

関連論文

• Silicon Field Emitter Capable of Low Voltage Emission

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