スポンサーリンク
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan | 論文
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- Chemical Modification of Multiwalled Carbon Nanotubes by Vacuum Ultraviolet Irradiation Dry Process
- Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides
- Spurious Suppression Effect by Transmit Bandpass Filters with HTS Dual-Mode Resonators for 5GHz Band
- Improvement of Electron Beam Recorder for Mastering of Future Storage Media
- Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
- Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory
- Effects of Etch Rate on Plasma-Induced Damage to Porous Low-$k$ Films
- SPM Studies of Hydrogen-Induced Degradation of Pt/PLZT/Pt Capacitors
- Influence of Titanium Liner on Resistivity of Copper Interconnects
- Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors
- Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal–Organic Chemical Vapor Deposition
- Analysis of Ferroelectric Microcapacitors at Low and High Temperatures Using a Scanning Probe Microscope
- Ferroelectric Properties of Cr-Doped BiFeO3 Films Crystallized below 500 °C
- Electron Beam Recorder with Nanometer-Scale Accuracy for 100 Gbit/in2 Density Mastering
- Electrooptic Properties of Lead Zirconate Titanate Films Prepared on Silicon Substrate
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- First Demonstration of Electrically Driven 1.55 μm Single-Photon Generator