スポンサーリンク
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan | 論文
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling
- Simplified Analytical Model of Extended Second-Order Lindhard–Scharff–Schiott Theory
- Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition
- A Novel Magnetic Tunneling Junction Shaped Cell with Large Write Operation Margin for High-Density Magnetoresistive Random Access Memory
- Extended Lindhard–Scharf–Schiott Theory for Ion Implantation Profiles Expressed with Pearson Function