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Fraunhofer Institute for Applied Solid State Physics IAF | 論文
- Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
- Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
- Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
- High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
- Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
- Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
- Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
- Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias