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First Principles Simulation Group Computational Materials Science Center National Institute For Mate | 論文
- Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
- Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
- A Possible Origin of Carrier Doping into DNA(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
- Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
- First-Principles Calculation Software for Dielectric Response Study of High-k Materials
- Novel precursors for SiCH low-k caps beyond the 22nm node: reactions of silacyclopentane precursors in the plasma-enhanced chemical vapor deposition process and structural analyses of SiCH films (Special issue: Dry process)
- 2P-030 Structural modelling of human Aryl hydrocarbon receptor and QM/MM study of its interaction with dioxins(The 46th Annual Meeting of the Biophysical Society of Japan)
- Work Function Changes of GaAs Surfaces Induced by Se treatment
- Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals : Insights from Ab Initio Total Energy Calculatons
- F Atom Adsorption on the Fluorinated Si(001) Surface
- Theoretical Scanning Tunneling Microscopy Images of the Ga-rich GaAs(001)-(4×2) Surface(STM-GaAs)
- Supramolecular Chirality Measurement of an Optically Anomalous Single Crystal
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations