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Faculty Of Technology Tokyo University Of Agriculture And Technology | 論文
- Resonant Photoemission Studies of Thulium Monochalcogenides around the Tm 4d Threshold
- 21aPS-118 Cd_2Re_2O_7におけるT_cの圧力変化(21aPS 領域8ポスターセッション(f電子系等および低温),領域8(強相関系:高温超伝導,強相関f電子系など))
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- 23aPS-50 大型インデンターセルを用いたSrFe_2As_2の高圧NMR(23aPS 領域8ポスターセッション(低温I(鉄系超伝導,銅酸化物など)),領域8(強相関系:高温超伝導,強相関f電子系など))
- 23pPSB-43 Ce(Ni,Co)Sn系における価数転移温度の圧力・元素置換効果(23pPSB 領域8ポスターセッション(f電子系等),領域8(強相関系:高温超伝導,強相関f電子系など))
- 重い電子系超伝導体CeCu2Si2の価数揺らぎ超伝導機構の検証--Cu-NQRからのアプローチ
- 23pPSA-30 高圧下におけるCeCu_2Si_2の核磁気緩和(23pPSA ポスターセッション(f電子系等I),領域8(強相関係:高温超伝導,強相関f電子系など))
- Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Photoemission Study of Mixed-Valent Tm-monochalcogenides : Evidence of Electron-Correlation Effect in Different Tm-Core Levels (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- A Note on the Composition of GaAs_P_x Grown in the GaAs-AsCl_3-PCl_3-H_2 System
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Deep-Level Energy States in Nanostructural Porous Silicon
- Electroluminescence from Deuterium Terminated Porous Silicon
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
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