スポンサーリンク
Faculty Of Science And Technology Meijo University | 論文
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
- Microwave Dielectric Characteristics of Y_2BaZnO_5 Ceramics with Sm Substitution for Y
- Influence of M (M = Zn and Ni) Substitution for Cu on Microwave Dielectric Characteristics of Yb_2Ba(Cu_M_x)O_5 Solid Solutions
- Microwave Dielectric Properties and Crystal Structure of Y_2(Ba_Sr_x)(Cu_Zn_y)O_5 Solid Solutions Synthesized by a Solid-State Reaction Method
- Microwave Dielectric Properties of Sm_2Ba(Cu_Zn_x)O_5(x = 0 to 1) Solid Solutions
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- The Influence of Load-Difference in Reciprocating Stroke on the Lubricated Wear
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- High-Power UV-Light-Emitting Diode on Sapphire
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors