スポンサーリンク
Electrotechnical Laboratory (ETL) | 論文
- First-Principles Study on Piezoelectric Constants in Strained BN, AlN, and GaN
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor