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Electrotechnical Laboratory (ETL) | 論文
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Tip-Induced Surface Disorder on Hydrogen-Terminated Silicon(111) Surface Observed by Ultrahigh-Vacuum Atomic Force Microscopy
- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force Microscopy
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Origin of Abnormal Grain Growth in Tungsten Bronze Structured Ferroelectric Sr_xBa_Nb_2O_6 Ceramics
- Site Occupancy and Dielectric Characteristics of Strontium Barium Niobate Ceramics : Sr/Ba Ratio Dependence
- Investigation of the Peptide Conformation by Measuring Force Curve using AFM
- Measurement of the Length of the α Helical Section of a Peptide Directly Using Atomic Force Microscopy
- Carbon-Nanotube Tip for Highly-Reproducible Imaging of Deoxyribonucleic Acid Helical Turns by Noncontact Atomic Force Microscopy
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field