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Electrotechnical Laboratory (ETL) | 論文
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Two Dimensional Electrons and Ions
- Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
- Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
- Electron Beam Block Exposure : Electron Beam Lithography
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Measurement of Local Density of States by Scanning Tunneling Spectroscopy at Low Temperature : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Charge Density Waves
- Effect of Atomic Force on the Surface Corrugation of 2H-NbSe_2 Observed by Scanning Tunneling Microscopy
- Atomic Force Microscopy of Single-Walled Carbon Nanotubes Using Carbon Nanotube Tip
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition