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Electrotechnical Laboratory (ETL) | 論文
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- 1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
- Comparison of Thin GaN and AlN Layers Deposited by Plasma Assisted Molecular Beam Epitaxy on 6H-SiC
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode