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Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School | 論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Photoluminescence Analysis of Deep Acceptor in CdTe Films on GaAs(100) Substrates
- Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates
- Band Offset Dependence of Exciton Binding Energy in CdxZn1-xS/ZnS Quantum Wells
- Proposal for ZnS/Mg xBeyZn1-x-yS Quantum Wells
- Estimation of Band Lineups and Optical Gains in CdxZn1-xS/MgyZn1-yS Quantum Wells
- Effect in Changes of Conduction and Valence Band Offsets on Exciton Binding Energy in CdxZn1-xSe/ZnSySe1-y Single Quantum Wells
- Reduction in Induced Strain in CdxZn1-xS Well Layers Using ZnS1-ySey Barrier Layers and Inhibition of Induced Strain due to Lattice Mismatch between MgzZn1-zS Cladding Layers and CdxZn1-xS/ZnS1-ySey Multiple Quantum Wells by Adjusting Mg Content
- Effect of Induced Strain on Band Lineups in CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures
- Effect of Induced Strain Due to Lattice Mismatch between MgyZn1-yS Cladding Layers and CdxZn1-xS/ZnS Quantum Wells on Effective Band Gap Energy in CdxZn1-xS/ZnS/MgyZn1-yS Separate-Confinement Heterostructures
- Excitonic Properties in CdxZn1-xS/ZnS Quantum Wells
- Effect of Image Charge on Exciton Binding Energy in ZnS/BexZn1-xS Quantum Wells