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Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
- Influence of Annealing during Growth on Defects in Czochralski Silicon
- Low Oxygen Content Czochralski Silicon Crystal Growth
- Cold-emitting Cathode Materials
- New Cold Cathode Using Magnesium Oxide
- Esaki-Diodes with Bending-Introduced Dislocations
- The Effect of Uniaxial Stress on Ge p-n Junctions with Various Doping Densities
- Effect of Uniaxial Stress on Germanium p-n Junctions (II)
- Effect of Uniaxial Stress on Germanium p-n Junctions
- Degradation of Ge-Doped and Zn-Doped GaAs Tunnel Diodes
- Temperature and Dispersion Characteristics of the Optical Rotatory Power of TeO_2 Single Crystal
- Quasi-static Hysteresis in Barium-titanate Single Crystals
- Green Electroluminescence in Low-Voltage-Driven Metal-Insulator-Semiconductor Structure Devices
- Negative Characteristics of a Probe in a Magnetic Field
- Equilibrium Vapor Pressure of Indium Antimonide
- Annealing Effect on GaAs Substrate Crystals
- Proton Magnetic Resonance and X-Ray Diffraction Studies of Polypropylene
- Preparation and Electrical Properties of Polytetracyano-ethylene Copper Chelate Film
- Effect of Fe_2O_3 on the Properties of Barium Titanate Single Crystals
- The Magnetic Structure of Fe_2As