Annealing Effect on GaAs Substrate Crystals

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1969-01-05

著者

• Maruyama Susumu

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• YAMAGUCHI Masao

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamaguchi Masao

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamaguchi Masao

  Electrical Communication Laboratories

関連論文

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• Sphingosine Inhibition of NADPH Oxidase Activation in a Cell-Free System
• Differences in Mechanisms for Cell-Free NADPH Oxidase Activation between Arachidonate and Sodium Dodecyl Sulfate
• Optical Damage in Fe-Doped LiNbO_3
• Optical Damage in LiNbO_3 Inducedby X-ray Irradiation
• Electron Hall Mobility in Reduced LiNbO_3
• Surface Smoothness and Lattice Constant of Gallium Arsenide Grown by Liquid Phase Epitaxy
• Equilibrium Vapor Pressure of Indium Antimonide
• Liquid Phase Epitaxy of Gallium Arsenide
• Annealing Effect on GaAs Substrate Crystals
• X-Ray Study on Crystal Perfection of Gallium Arsenide
• Behavior of Copper Impurity in ZnSe
• In_xGa_As Injection Lasers
• Ohmic Contacts to CdS
• Zinc Diffusion in In_xGa_As
• Anomalous Transmission of X-Rays through Germanium Single Crystals Containing Dislocations and Impurities
• Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs II
• Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs

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