Surface Smoothness and Lattice Constant of Gallium Arsenide Grown by Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-01-05
著者
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Maruyama Susumu
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Maruyama Susumu
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Surface Smoothness and Lattice Constant of Gallium Arsenide Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxy of Gallium Arsenide
- Annealing Effect on GaAs Substrate Crystals
- X-Ray Study on Crystal Perfection of Gallium Arsenide
- Anomalous Transmission of X-Rays through Germanium Single Crystals Containing Dislocations and Impurities