Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-08-05
著者
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Yamaguchi Masao
Electrical Communication Laboratories
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Yamaguchi Masao
Electrical Communication Laboratory
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ISIBASHI Yoshio
Electrical Communication Laboratory
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- Annealing Effect on GaAs Substrate Crystals
- Behavior of Copper Impurity in ZnSe
- In_xGa_As Injection Lasers
- Ohmic Contacts to CdS
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- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs II
- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs