Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs II
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-04-05
著者
-
Ishibashi Yoshio
Electrical Communication Laboratory
-
Ishibashi Yoshio
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Yamaguchi Masao
Electrical Communication Laboratories
関連論文
- Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes
- Decavanadate Inhibits the Cell-Free Activation of Neutrophil NADPH Oxidase without Affecting Tyrosine Phosphorylation
- Sphingosine Inhibition of NADPH Oxidase Activation in a Cell-Free System
- Differences in Mechanisms for Cell-Free NADPH Oxidase Activation between Arachidonate and Sodium Dodecyl Sulfate
- Optical Damage in Fe-Doped LiNbO_3
- Optical Damage in LiNbO_3 Inducedby X-ray Irradiation
- Electron Hall Mobility in Reduced LiNbO_3
- Equilibrium Vapor Pressure of Indium Antimonide
- Annealing Effect on GaAs Substrate Crystals
- Behavior of Copper Impurity in ZnSe
- In_xGa_As Injection Lasers
- Ohmic Contacts to CdS
- Zinc Diffusion in In_xGa_As
- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs II
- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs