Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method

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概要

• 論文の詳細を見る

• Phosphorus-doped Czochralski (CZ) silicon crystals with less than 5% macroscopic radial and microscopic axial resistivity variations are grown in the presence of 1000 Oe vertical magnetic field strength. Crystals with extremely improved dopant homogeneity are facilitated by determining the appropriate crystal and crucible rotation rates corresponding to the residual thermal convection in the molten silicon. Experimental results can be consistently explained by flow model of forced and thermal convections which are stabilized by a magnetic field.

• 社団法人応用物理学会の論文
• 1984-01-20

著者

• Hoshikawa Keigo

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• KOHDA Hiroki

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• HIRATA Hiroshi

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kohda Hiroki

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Hirata Hiroshi

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• HOSHIKAWA Keigo

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

関連論文

• Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
• Influence of Annealing during Growth on Defects in Czochralski Silicon
• Low Oxygen Content Czochralski Silicon Crystal Growth
• Czochralski Silicon Crystal Growth in the Vertical Magnetic Field

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