Influence of Annealing during Growth on Defects in Czochralski Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Nakanishi Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hoshikawa Keigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HIRATA Hiroshi
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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KOHDA Hiroki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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HIRATA Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kohda Hiroki
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirata Hiroshi
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirata Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HOSHIKAWA Keigo
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
- Influence of Annealing during Growth on Defects in Czochralski Silicon
- Low Oxygen Content Czochralski Silicon Crystal Growth
- A New Method for Suppression of Hard Bubbles in LPE Garnet Films
- The Dissolution Rate of Silica in Molten Silicon
- Magnetic Loss and Bubble Dynamics in (Y, Eu, Sm)_3(Ga, Fe)_5O_ System
- Hard-Bubble Free Garnet Films in (Y, Eu)_3(Ga, Fe)_5O_ System
- A New Type of Bubble Motion in Magnetic Garnet Films
- Interface Growth Feature and Voids in Sapphire Ribbon Crystals
- Temperature Dependence of Instability in Bubble Velocity in Garnet Films
- Effect of Film Thickness on Instability in Bubble Velocity of Magnetic Garnet Films