Low Oxygen Content Czochralski Silicon Crystal Growth
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概要
- 論文の詳細を見る
A low oxygen content silicon crystal ingot with 2.5×10^<17> to 3.5×10^<17> atoms cm^<-3> was obtained. It was grown by using the Czochralski crystal growth furnace heated with a graphite heater connected to a three phase electrical source, and by controlling the seed and the crucible rotation in conjunction with the fluid rotation caused by the rotating magnetic field of the system. Neither bulk stacking faults after oxidation in wet oxygen at 1100℃ for 2 hours, nor oxide precipitates after being annealed in an argon atmosphere at 1000℃ for 12 hours, were observed in the crystal.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Nakanishi Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hoshikawa Keigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HIRATA Hiroshi
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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KOHDA Hiroki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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HIRATA Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kohda Hiroki
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirata Hiroshi
Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirata Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HOSHIKAWA Keigo
Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
- Influence of Annealing during Growth on Defects in Czochralski Silicon
- Low Oxygen Content Czochralski Silicon Crystal Growth
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- The Dissolution Rate of Silica in Molten Silicon
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- A New Type of Bubble Motion in Magnetic Garnet Films
- Interface Growth Feature and Voids in Sapphire Ribbon Crystals
- Temperature Dependence of Instability in Bubble Velocity in Garnet Films
- Effect of Film Thickness on Instability in Bubble Velocity of Magnetic Garnet Films