Czochralski Silicon Crystal Growth in the Vertical Magnetic Field

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概要

• 論文の詳細を見る

• Czochralski (CZ) silicon crystals with striation free and microscopic homogeneous dopant concentrations are grown under the presence of an axially symmetric vertical magnetic field. The thermal convections of 3.5 kg of molten silicon in a crucible are successfully suppressed by a magnetic field of more than 1000 Oe in strength. Many advantages are found for the method developed in comparison with the conventional transverse magnetic field method in use.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• Hoshikawa Keigo

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
• Czochralski Silicon Crystal Growth in the Vertical Magnetic Field

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