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Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita | 論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Diffusion of Electric Vehicles and Novel Social Infrastructure from the Viewpoint of Systems Innovation Theory
- Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
- A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
- Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
- Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
- The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
- Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
- Fault-Tolerant Meshes with Constant Degree(Selected Papers from the 17th Workshop on Circuits and Systems in Karuizawa)
- On the Number of Rooms in a Rectangular Solid Dissection
- The O-Sequence : Representation of 3D-Dissection