スポンサーリンク
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan | 論文
- In situ Transmission Electron Microscopy of Field-Emitting Bundles of Double-Wall Carbon Nanotubes
- Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
- Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
- Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors
- Formation of Secondary Thin Carbon Nanotubes on Thick Ones and Improvement in Field-Emission Uniformity
- Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors
- Effect of Sputtering Deposition Process on Magnetic Properties of Magnetic Multilayers
- Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
- Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
- Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- Generation of Squeezed Vacuum Using Wavelength-Tunable Soliton Pulse and Nonlinear Polarization Interferometer
- Effects of Process Parameters and Substrate Structures on Growth of Single-Walled Carbon Nanotubes by Catalytic Decomposition of Ethanol
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma