スポンサーリンク
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan | 論文
- Internal Photoemission over HfO2 and Hf(1-x)SixO2 High-$k$ Insulating Barriers: Band Offset and Interfacial Dipole Characterization
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Crystallinity of Microscopically Patterned (Pb,La)(Zr,Ti)O3 Films on (001)Nb-Doped SrTiO3 Substrates Prepared by Chemical Solution Deposition Process with Resist Molds
- Study on the Mechanism of Silicon Chemical Mechanical Polishing Employing In Situ Infrared Spectroscopy
- Study on the Mechanisms of Chemical Mechanical Polishing on Copper and Aluminum Surfaces Employing In Situ Infrared Spectroscopy
- Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
- Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment
- Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation
- Fabrication of Periodically-Inverted AlGaAs Waveguides for Quasi-Phase-Matched Wavelength Conversion at 1.55 μm
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- Kinetics of TiN Chemical Vapor Deposition Process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure