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Department of Electronics and Bioinformatics, Science and Technology, Meiji University | 論文
- Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
- Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn_Cd_xS Thin Film Electroluminescent Devices
- Several Blue-Emitting Thin-Film Electroluminescent Devices
- Eleetroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions
- Strong Ultraviolet-Emitting ZnF_2:Gd Thin Film Electroluminescent Device
- New Red-Emitting CaY_2S_4:Eu Thin-Film Electroluminescent Devices
- Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering
- A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy(the IEEE International Conference on SISPAD '02)
- TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET(the IEEE International Conference on SISPAD '02)
- A Simplified Dopant Pile-Up Model for Process Simulators(Regular Section)
- Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering
- A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
- Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroiluminescent Devices Prepared by Two Targets pulse Electron Beam Evaporation(Special Issue on Electronic Displays)
- Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process (Special lssue on SISPAD'99)
- High-Luminance Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroluminescent Devices
- Transient Behavior in ZnS:TbF_x Thin-Film Electroluminescent Devices Excited by Very Short Pulse
- 0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
- Broad Band Emission Behaviors an ZnS Thin Film Electroluminescent Devices : Optical Properties of Condensed Matter
- Effect of Low-Molecula-Weight Novolak Resin on Microgrooves : Resist and Processes
- Effect of Low-Molecular-Weight Novolak Resin on Microgrooves