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Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University | 論文
- Improvement of Luminescent Uniformity via Synthesizing the Carbon Nanotubes on a Fe-Ti Co-deposited Catalytic Layer
- Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst Nanopaticles
- Constraining the Direction of Carbon Nanotubes by Oxide Capping Layer
- Fabrication and Characterization of Lateral Field Emission Device Based On Carbon Nanotubes
- Growth of Epitaxial-Like (Sr_Ba_)Nb_2O_6 Ferroelectric Films
- Enhanced NBTI Degradation by SMT in Short-Channel pMOSFET
- A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric
- Growth Behavior of Y_1Ba_2Cu_3O_ Superconducting Thin Films Using Laser Ablation Technique
- Reactive Ion Pretreatment Technique to Improve the Ashing Resistance of Low Dielectric Constant High Carbon Content Polymer
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
- Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
- Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
- Comprehensive Study of Plasma Pretreatment Process for Thin Gate Oxide (< 10 nm) Fabricated by Electron Cyclotron Resonance Plasma Oxidation
- A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor
- Activity Coefficients of Electrons and Holes in Degenerate Semiconductors with Nonuniform Composition
- Reactively Sputtered Amorphous TaSi_xN_y Films Serving as Barrier Layer Against Copper Diffusion
- Investigation of NiSi Fully-Silicided Gate on SiO_2 and HfO_2 for Applications in Metal-Oxide-Semiconductor Field-Effect Transistors
- An Excellent Cu Diffusion Barrier for Next Generation Multi-level Cu-interconnect
- Thermal Stability of Amorphous-like WN_x/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p^+-Si Contact System