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Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University | 論文
- Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
- Charging Damages to Gate Oxides in a Helicon O_2 Plasma
- Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
- Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
- The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
- Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
- Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
- Fabrication and Characterization of the Pd-Silicided Emitters for Field-Emission Devices
- Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
- Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
- Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
- A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
- Blind SNR Estimation with Coherent Function for OFDM Systems
- The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
- A Low-Complexity Minimum-Interference Symbol Time Estimation for OFDM Systems
- Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices
- Electrical Characteristics of Thirn-Film Transistors with Double-Active-Layer Structure