スポンサーリンク
Department of Electronic Materials Engineering, Fukuoka Institute of Technology, | 論文
- Application of Screen-Printed Catalytic E1ectrodes to MEMS-Based Fuel Cells (特集:燃料電池を支えるMEMS/NEMS技術)
- Debris-Free Laser-Assisted Low-Stress Dicing for Multi-Layered MEMS : Separation Method of Glass Layer
- Micro-Nano Electro Mechanical Systems
- Vertical Diaphragm Electrostatic Actuator for a High Density Ink Jet Printer Head
- Debris-free Low-stress High-speed Laser-assisted Dicing for Multi-layered MEMS
- Debris-Free High-Speed Laser-Assisted Low-Stress Dicing for Multi-Layered MEMS
- Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method
- Iron-Related Donor Level in N-Type Silicon
- Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
- Design and Fabrication of Passive Wireless SAW Sensor for Pressure Measurement
- Modulation of Carbachol-Induced Cl^- Currents and Fluid Secretion by Isoproterenol in Rat Submandibular Acinar Cells
- Role of Calcium Ions in the Potentiation by Isoproterenol of Carbachol-Induced Ionic Currents and Secretion Activity in Rat Salivary Glands
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Aromatic Allylsulfenylation with in Situ Generated Allylic Thiols under the Heck Conditions
- Aromatic Allylsulfenylation with in Situ Generated Allyl Thiols under the Heck Conditions
- Silver(I)-Catalyzed Aminocyclization of 2,3-Butadienyl and 3,4-Pentadienyl Carbamates : An Efficient and Stereoselective Synthesis of 4-Viny-2-oxazolidinones and 4-Vinyltetrahydro-2H-1,3-oxazin-2-ones
- MEMS-based Air Turbine with Radial-inflow Type Journal Bearing
- Fabrication of Anti-Corrosive Capacitive Vacuum Sensors with a Silicon Carbide/Polysilicon Bi-Layer Diaphragm and Electrical Through-Hole Connections on the Opposite Side
- Fabrication of Deep Silicon Microstructures by the Combination of Anodization and p^ Etch Stop
- Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy