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Department of Electronic Engineering, School of Engineering, University of Tokyo | 論文
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- GaN-Based High-Speed Intersubband Optical Switches
- Diffiraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol-Gel Silica Film by Laser Irradiation
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus