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Department of Electrical and Information Engineering Faculty of Engineering Yamagata University | 論文
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- Elimination of a-Axis Growth in YBa_2Cu_3O_7-δ Films on CeO_2-Buffered Al_2O_3
- Studies on the Surface Morphology and Orientation of CeO_2 Films Deposited by Pulsed Laser Ablation
- Relationship between T_c and Cu Valence and Bond Lengths of Cu-Cu and Cu-O for Ba_Eu_Cu_3O_ Compounds
- Structure and Resistivity of BaBiO_y, Ba_<1x>La_xBiO_3, and BaBi_<1x>La_xO_3 (Special Issue on High-Temperature Superconducting Electronics)
- Crystallization of Amorphous YBCO and BSCCO Thin Films by Zone-Melt Technique (Special Issue on High-Temperature Superconducting Electronics)
- Influence of Crystal-Originated "Particle" Microstructure on Silicon Wafers on Gate Oxide Integrity
- Efficiency of Boron Getterimg for Iron Irmpurities in p/p^+ Epitaxial Silicon Wafers
- Microstructure Observation of "Crystal-Originated Particles" on Silicon Wafers
- Excitation of a Progressive Wave in a Flexurally Vibrating Transmission Medium : High Power Ultrasonics
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Synthesis and Characterization of Ba β-Diketonate Cormplexes for Chemical Vapor Deposition of Thin-Film Superconductors
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Promotion of High-T_c Phase in Te-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors Prepared by the Melt-Quenching Method
- On the Formation of High-T_c Phase in Mo-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors
- Effect of Low-Temperature Annealing on the Coupling at Grain Boundaries in Sb-Doped (Bi, Pb)_2Sr_2Ca_2Cu_3O_y Superconductors
- Effect of Sb Addition on the Formation of High-T_c Phase in the Bi-Pb-Sr-Ca-Cu-O Ceramics
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction