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Department of Electrical and Information Engineering Faculty of Engineering Yamagata University | 論文
- Genipin prevents fulminant hepatic failure resulting in reduction of lethality through the suppression of TNF-α production
- Gabexate mesilate, a synthetic protease inhibitor, attenuates carbon tetrachloride-induced liver injury in rats
- Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
- Basic Studies on Powder-Sending Devices Using Ultrasonic Vibration : High Power Ultrasonics
- Ultrasonic Motors Using Piezoelectric Ceramic Multi-Mode Vibrators : High Power Ultrasonics
- Fundamental Considerations of Excitation of a Flexural Progressive Wave and its Application : High Power Ultrasonics
- 320 kHz Timing Tank Mechanical Filter for Digital Subscriber Transmission System : V: Piezoelectrics
- 6)白色発光有機発光ダイオード(情報ディスプレイ研究会)
- 白色発光有機発光ダイオード : 情報ディスプレイ
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction