Structure and Resistivity of BaBiO_y, Ba_<1x>La_xBiO_3, and BaBi_<1x>La_xO_3 (Special Issue on High-Temperature Superconducting Electronics)

概要

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Structure and resistivity of BaBiO_y were compared with those of Ba_<1-x>La_xBiO_3. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiO_y leads to an increase in the lattice parameter c from 4.37 Å to 4.53 Å, in the unit cell volume from 81 Å^3 to 87Å^3, and in the resistivity from 10 Ωcm to 2×^5 Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi_<1-x>La_xO_3 was compared with that of BaBiO_y and Ba_<1-x>La_xBiO_3. We also found that pseudocubic Ba_<1-x>La_x BiO_3 remains semiconducting as well as pseudotetragonal BaBiO_y. The high resistivity in the Ba_<1-x>La_xBiO_3 and the BaBi_<1-x>La_xO_3 will be useful to the application for the SIS junction.
社団法人電子情報通信学会の論文
1993-08-25