スポンサーリンク
Department of Electrical and Electronic Engineering, University of Tokushima | 論文
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- High-performance liquid chromatographic analysis of amoxapine and 8-hydroxyamoxapine in human serum
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Functions of the D-Ribosyl Moiety and the Lower Axial Ligand of the Nucleotide Loop of Coenzyme B_ in Diol Dehydratase and Ethanolamine Ammonia-lyase Reactions
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
- Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
- Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
- Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
- Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
- A Digital Method of Gas Laser Etching for Oxide Superconductors
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition