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Department of Electrical and Electronic Engineering, University of Tokushima | 論文
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- MOCVD法によりサファイア基板上に作製したAlGaN/GaNヘテロ構造の特性