スポンサーリンク
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan | 論文
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Wide-Angle Coupling to Multi-Mode Interference Devices : A Novel Concept for Compacting Photonic Integrated Circuits
- Quantum-Confined Stark Effect in a Parabolic-Potential Quantum Well
- Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
- Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Electrooptic Characterization of Five-Layer Asymmetric Coupled Quantum Well
- Dispersion of the Linear Electrooptic Coefficient and Its Relation to Resonant Raman Scattering in ZnSe
- A Study on Electroabsorption Effects in Coupled Quantum Wells
- Electrooptic Coefficient r_ in Proton-Exchanged z-Cut LiTaO_3 Waveguides
- Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
- Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
- Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
- Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well
- Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers
- Elastooptic and Electrooptic Properties of GaAs
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition