スポンサーリンク
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan | 論文
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- 1.55 μm InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation
- Lattice Constants of the Proton-Exchanged Waveguides Formed on Domain-Inverted LiTaO_3
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Linear Electrooptic Properties of ZnTe at 10.6 Microns
- Electrooptic Properties and Raman Scattering in InP
- Design and Analysis of the X-Waveguide Optical Switch in a MESFET Geometry
- Origin of UV Sensitivity of SiON Film and Bidirectional UV Trimming of SiON Microring Resonator
- Application of Modern Control Theory to Temperature Control of the MBE System
- Measurements of the Linear Electrooptic Coefficients and Analysis of the Nonlinear Susceptibilities in Cubic GaAs and Hexagonal CdS
- A Theory on the Photoelastic Coefficients and Unclamped Values of the Linear Electrooptic Coefficients
- Elastooptic Properties of InP
- Linear Electrooptic Properties of InP
- Generalized Theory of Nonlinear Susceptibilities and Linear Electrooptic Coefficients Based on a Three-Dimensional Anharmonic Oscillator Model
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)