スポンサーリンク
Department of Electrical Engineering, Kyoto University | 論文
- First results of auroral tomography from ALIS-Japan multi-station observations in March, 1995
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Photoelectron Spectra of Pure Rh Metal and CuRh Alloys
- Vacuum Ultraviolet Absorption Spectra of La,Ce,Sm,Eu and Gd Metals
- The Valence Band Spectra of AgRu, AgRh and AgPd Alloys
- Threshold Singularities of p-shell Absorption in Potassium, Rubidium and Cesium Metals
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiN_x Layers
- Electroluminescence of AlAs/GaAs Disordered Superlattices
- Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
- Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
- Proposal and Experimental Results of Disordered Crystalline Semiconductors
- Al_xGa_As Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source
- Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
- Determination of Al Composition and DLTS Measurements of Al_xGa_Sb on GaSb Substrate