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Department Of Physics School Of Science And Engineering Waseda University:atsugi Electrical Communic | 論文
- Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
- Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
- Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
- Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
- Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
- ESR Study of Low Temperature Phase Transitions in Se Doped LiKSO_4
- Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration
- Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier
- Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs